Emission wavelength tuning by mechanical stressing of GaAs/Ge/Si microbeams

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Emission wavelength tuning by mechanical stressing of GaAs/Ge/Si microbeams.

We propose an approach for tuning a gain spectrum of semiconductor lasers under temperature fluctuations, where the heat-induced effect is dynamically compensated using a mechanical stressing. By stressing GaAs/Ge/Si microbeams, emission wavelength tuning is experimentally demonstrated for the overlying GaAs layers as a proof-of-concept, and the results are followed by theoretical calculations....

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ژورنال

عنوان ژورنال: Optics Express

سال: 2011

ISSN: 1094-4087

DOI: 10.1364/oe.19.015732